EVLMG1LPBRDR1
ActiveMASTERGAN1L POWER MODULE FOR HIGH EFFICIENCY HALF-BRIDGE-GAN-BASED POWER SUPPLY APPLICATIONS
EVLMG1LPBRDR1
ActiveMASTERGAN1L POWER MODULE FOR HIGH EFFICIENCY HALF-BRIDGE-GAN-BASED POWER SUPPLY APPLICATIONS
Technical Specifications
Parameters and characteristics for this part
| Specification | EVLMG1LPBRDR1 |
|---|---|
| Contents | Board(s) |
| Embedded | False |
| Function | Half H-Bridge Driver (Internal FET) |
| Supplied Contents | Board(s) |
| Type | Power Management |
| Utilized IC / Part | MasterGaN1L |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 101.00 | |
| N/A | 1 | $ 100.67 | ||
Description
General part information
MASTERGAN1 Series
The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.
The integrated power GaNs have RDS(ON)of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
Documents
Technical documentation and resources
