Discrete Semiconductor Products

GBI25J-T

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	GBI25J-T

Current - Average Rectified (Io)	4.2 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-SIP, GBI
Supplier Device Package	GBI
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Package / Case	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Diode Type	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Voltage - Peak Reverse (Max)	Voltage - Forward (Vf) (Max) @ If
Diotec Semiconductor GBI25M	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	4.2 A	1 kV
Diotec Semiconductor GBI25W	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	5 A		1.6 kV
Diotec Semiconductor GBI25K	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	4.2 A		800 V
Diotec Semiconductor GBI25D	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 ÁA	Single Phase	4.2 A		200 V
Diotec Semiconductor GBI25J-T	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	4.2 A	600 V
Diotec Semiconductor GBI25A	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	4.2 A	50 V
Diotec Semiconductor GBI25B	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C	1.1 V	5 µA	Single Phase	4.2 A	100 V
Diotec Semiconductor GBI25J-LV	4-SIP GBI	Through Hole	GBI	Standard	-50 °C	150 °C		5 µA	Single Phase	4.2 A	600 V		0.92 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBI

Technical documentation and resources