Discrete Semiconductor Products
PMPB10XNE,115
ActiveNexperia USA Inc.
20 V, SINGLE N-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
PMPB10XNE,115
ActiveNexperia USA Inc.
20 V, SINGLE N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMPB10XNE,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2175 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 12.5 W, 1.7 W |
| Rds On (Max) @ Id, Vgs | 14 mOhm |
| Supplier Device Package | DFN2020MD-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2797 | $ 0.83 | |
Description
General part information
PMPB10XNE Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources