20 V, single N-channel Trench MOSFET
20 V, single N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | -55 °C | 2175 pF | 20 V | DFN2020MD-6 | MOSFET (Metal Oxide) | 1.8 V | 4.5 V | 1.7 W 12.5 W | N-Channel | 6-UDFN Exposed Pad | 14 mOhm | 34 nC | 900 mV | Surface Mount | 9 A | 12 V |