Discrete Semiconductor Products

MSJP11N65A-BP

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N-CHANNEL MOSFET,TO-220

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	MSJP11N65A-BP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83.3 W
Rds On (Max) @ Id, Vgs [Max]	396 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
MCC (Micro Commercial Components) MSJP11N65-BP	4 V	TO-220AB (H)	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	78 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole	901 pF
MCC (Micro Commercial Components) MSJP11N65-BP	4 V	TO-220AB (H)	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	78 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole	901 pF
MCC (Micro Commercial Components) MSJP11N65A-BP	4 V	TO-220AB	MOSFET (Metal Oxide)	10 V	TO-220-3		83.3 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole		396 mOhm
MCC (Micro Commercial Components) MSJP11N65A-BP	4 V	TO-220AB	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	83.3 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 11A 83.3W (Tc) Through Hole TO-220AB

Technical documentation and resources