MSJP11 Series

Catalog

MOSFET N-CH 650V 11A TO220AB

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
MCC (Micro Commercial Components) MSJP11N65-BP	4 V	TO-220AB (H)	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	78 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole	901 pF
MCC (Micro Commercial Components) MSJP11N65-BP	4 V	TO-220AB (H)	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	78 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole	901 pF
MCC (Micro Commercial Components) MSJP11N65A-BP	4 V	TO-220AB	MOSFET (Metal Oxide)	10 V	TO-220-3		83.3 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole		396 mOhm
MCC (Micro Commercial Components) MSJP11N65A-BP	4 V	TO-220AB	MOSFET (Metal Oxide)	10 V	TO-220-3	380 mOhm	83.3 W	21 nC	650 V	N-Channel	30 V	11 A	150 °C	-55 °C	Through Hole