Discrete Semiconductor Products

IPL60R125C7AUMA1

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

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Discrete Semiconductor Products

IPL60R125C7AUMA1

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPL60R125C7AUMA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	103 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPL60R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPL60R125C7AUMA1	10 V	-40 °C	150 °C	103 W	600 V	20 V	MOSFET (Metal Oxide)	4 V	125 mOhm	1500 pF	34 nC	17 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel
INFINEON IPL60R160CFD7AUMA1	10 V	-40 °C	150 °C	95 W	600 V	20 V	MOSFET (Metal Oxide)	4.5 V	160 mOhm			16 A	Surface Mount	PG-VSON-4-1	4-PowerTSFN	N-Channel	31 nC	1330 pF
INFINEON IPL60R2K1C6SATMA1	10 V	-40 °C	150 °C	21.6 W	600 V	20 V	MOSFET (Metal Oxide)	3.5 V	2.1 Ohm		6.7 nC	2.3 A	Surface Mount	PG-TSON-8-2	8-PowerTDFN	N-Channel		140 pF
INFINEON IPL60R180P6AUMA1	10 V	-40 °C	150 °C		600 V	20 V	MOSFET (Metal Oxide)	4.5 V	180 mOhm	2080 pF		22.4 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	44 nC		176 W
INFINEON IPL60R185CFD7AUMA1	10 V	-40 °C	150 °C	85 W	600 V	20 V	MOSFET (Metal Oxide)	4.5 V	185 mOhm			14 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	28 nC	1199 pF
INFINEON IPL60R140CFD7AUMA1												18 A	Surface Mount	PG-VSON-4	4-PowerTSFN
INFINEON IPL60R199CPAUMA1	10 V	-40 °C	150 °C	139 W	600 V	20 V	MOSFET (Metal Oxide)				32 nC	16.4 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel		1520 pF		3.5 V	199 mOhm
INFINEON IPL60R255P6AUMA1	10 V	-40 °C	150 °C		600 V	20 V	MOSFET (Metal Oxide)	4.5 V	255 mOhm			15.9 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	31 nC	1450 pF	126 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.03
		10	$ 3.38
		100	$ 2.74
		500	$ 2.43
		1000	$ 2.08
	Digi-Reel®	1	$ 4.03
		10	$ 3.38
		100	$ 2.74
		500	$ 2.43
		1000	$ 2.08
	N/A	3000	$ 4.66
	Tape & Reel (TR)	3000	$ 1.88
Newark	Each (Supplied on Cut Tape)	1	$ 2.38

Description

General part information

IPL60R Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources