Specification	IPL60R180P6AUMA1

Current - Continuous Drain (Id) @ 25°C	22.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	176 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPL60R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPL60R125C7AUMA1	10 V	-40 °C	150 °C	103 W	600 V	20 V	MOSFET (Metal Oxide)	4 V	125 mOhm	1500 pF	34 nC	17 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel
INFINEON IPL60R160CFD7AUMA1	10 V	-40 °C	150 °C	95 W	600 V	20 V	MOSFET (Metal Oxide)	4.5 V	160 mOhm			16 A	Surface Mount	PG-VSON-4-1	4-PowerTSFN	N-Channel	31 nC	1330 pF
INFINEON IPL60R2K1C6SATMA1	10 V	-40 °C	150 °C	21.6 W	600 V	20 V	MOSFET (Metal Oxide)	3.5 V	2.1 Ohm		6.7 nC	2.3 A	Surface Mount	PG-TSON-8-2	8-PowerTDFN	N-Channel		140 pF
INFINEON IPL60R180P6AUMA1	10 V	-40 °C	150 °C		600 V	20 V	MOSFET (Metal Oxide)	4.5 V	180 mOhm	2080 pF		22.4 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	44 nC		176 W
INFINEON IPL60R185CFD7AUMA1	10 V	-40 °C	150 °C	85 W	600 V	20 V	MOSFET (Metal Oxide)	4.5 V	185 mOhm			14 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	28 nC	1199 pF
INFINEON IPL60R140CFD7AUMA1												18 A	Surface Mount	PG-VSON-4	4-PowerTSFN
INFINEON IPL60R199CPAUMA1	10 V	-40 °C	150 °C	139 W	600 V	20 V	MOSFET (Metal Oxide)				32 nC	16.4 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel		1520 pF		3.5 V	199 mOhm
INFINEON IPL60R255P6AUMA1	10 V	-40 °C	150 °C		600 V	20 V	MOSFET (Metal Oxide)	4.5 V	255 mOhm			15.9 A	Surface Mount	PG-VSON-4	4-PowerTSFN	N-Channel	31 nC	1450 pF	126 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.50
		10	$ 2.94
		100	$ 2.38
		500	$ 2.11
		1000	$ 1.81
	Digi-Reel®	1	$ 3.50
		10	$ 2.94
		100	$ 2.38
		500	$ 2.11
		1000	$ 1.81
	N/A	4750	$ 2.28
	Tape & Reel (TR)	3000	$ 1.70
		6000	$ 1.63

Description

General part information

IPL60R Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Documents

Technical documentation and resources

MOSFET CoolMOS™ P6 600V - 600V CoolMOS™ P6 The new benchmark of "multipurpose" parts - Electronics Maker

Article

IPL60R180P6

Data Sheets

IPL60R180P6AUMA1

Deep-Dive with AI

IPL60R180P6AUMA1

Deep-Dive with AI

Technical Specifications

IPL60R Series

Pricing

Description

IPL60R Series

Documents

MOSFET CoolMOS™ best-in-class RDSon per package products

MOSFET some key facts about avalanche

FIT Report - IPL60R180P6

MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies

MOSFET CoolMOS™ in TO-247 4-pin package

Infineon-MA005709547-MaterialContentSheet-v01_00-EN

IPL60R180P6

MOSFET CoolMOS™ P6 600V - 600V CoolMOS™ P6 The new benchmark of "multipurpose" parts - Electronics Maker

IPL60R180P6

IPL60R Series