Zenode.ai Logo
Beta
PMX300UNEZ
Discrete Semiconductor Products

PMX300UNEZ

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

PMX300UNEZ
Discrete Semiconductor Products

PMX300UNEZ

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMX300UNEZ
Current - Continuous Drain (Id) @ 25°C820 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.1 nC
Input Capacitance (Ciss) (Max) @ Vds120 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0603 Metric
Package / Case0201
Power Dissipation (Max)4.7 W, 300 mW
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackageDFN0603-3 (SOT8013)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2474$ 0.28

Description

General part information

PMX300UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.