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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case | Mounting Type | Vgs (Max) [Max] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 150 °C | -55 °C | MOSFET (Metal Oxide) | 120 pF | 2.1 nC | 30 V | 0603 Metric | 0201 | Surface Mount | 8 V | 4.7 W 300 mW | 900 mV | 1.8 V | 4.5 V | 250 mOhm | DFN0603-3 (SOT8013) | 820 mA |