Discrete Semiconductor Products

IPDQ60R075CFD7XTMA1

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INFINEON

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

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DocumentsIPDQ60R075CFD7XTMA1 | Datasheet

Discrete Semiconductor Products

IPDQ60R075CFD7XTMA1

Active

INFINEON

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Deep-Dive with AI

DocumentsIPDQ60R075CFD7XTMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPDQ60R075CFD7XTMA1

Drain to Source Voltage (Vdss)	600 V
Mounting Type	Surface Mount
Package / Case	22-PowerBSOP Module
Supplier Device Package	PG-HDSOP-22-1
Technology	MOSFET (Metal Oxide)

CoolMOS CFD7 Series

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)
INFINEON IPP60R090CFD7XKSA1	90 mOhm	150 °C	-55 °C	TO-220-3	25 A	20 V	N-Channel	51 nC	4.5 V	600 V	2103 pF	MOSFET (Metal Oxide)	Through Hole	10 V	PG-TO220-3	125 W
INFINEON IPW60R055CFD7XKSA1	55 mOhm	150 °C	-55 °C	TO-247-3	38 A	20 V	N-Channel	79 nC	4.5 V	600 V		MOSFET (Metal Oxide)	Through Hole	10 V	PG-TO247-3	178 W
INFINEON IPDQ60R075CFD7XTMA1				22-PowerBSOP Module						600 V		MOSFET (Metal Oxide)	Surface Mount		PG-HDSOP-22-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	694	$ 4.81
Mouser	N/A	1	$ 5.13
		10	$ 3.91
		25	$ 3.61
		100	$ 3.28
		250	$ 3.12
		500	$ 2.64
		750	$ 2.63

Description

General part information

CoolMOS CFD7 Series

The600 V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources

IPDQ60R075CFD7XTMA1 | Datasheet

Datasheet