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IPW60R055CFD7XKSA1
Discrete Semiconductor Products

IPW60R055CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 55 MOHM; FAST RECOVERY DIODE

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IPW60R055CFD7XKSA1
Discrete Semiconductor Products

IPW60R055CFD7XKSA1

Active
INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 55 MOHM; FAST RECOVERY DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R055CFD7XKSA1
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)178 W
Rds On (Max) @ Id, Vgs55 mOhm
Supplier Device PackagePG-TO247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 7.33
MouserN/A 1$ 6.77
10$ 6.66
25$ 4.24
240$ 4.11
480$ 3.26
NewarkEach 1$ 9.19
10$ 8.34
25$ 6.47
50$ 6.22
100$ 5.97
480$ 5.72
720$ 5.34

Description

General part information

CoolMOS CFD7 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.