Specification	NX138BKMYL

Current - Continuous Drain (Id) @ 25°C	380 mA
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	380 mW
Power Dissipation (Max)	2.8 W
Rds On (Max) @ Id, Vgs	2.3 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

NX138BKM Series

60 V, N-channel Trench MOSFET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Technology
Nexperia USA Inc. NX138BKMYL	150 °C	-55 °C	1.5 V	380 mA	60 V	20 pF	SOT-883	2.3 Ohm	N-Channel	SC-101 SOT-883	Surface Mount	20 V	0.7 nC	380 mW	2.8 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1817	$ 0.11

Description

General part information

NX138BKM Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.