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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | -55 °C | 1.5 V | 380 mA | 60 V | 20 pF | SOT-883 | 2.3 Ohm | N-Channel | SC-101 SOT-883 | Surface Mount | 20 V | 0.7 nC | 380 mW | 2.8 W | MOSFET (Metal Oxide) |