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PG-T0263-3
Discrete Semiconductor Products

IPB65R045C7ATMA1

Unknown
INFINEON

MOSFET N-CH 650V 46A D2PAK

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PG-T0263-3
Discrete Semiconductor Products

IPB65R045C7ATMA1

Unknown
INFINEON

MOSFET N-CH 650V 46A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB65R045C7ATMA1
Current - Continuous Drain (Id) @ 25°C46 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)227 W
Rds On (Max) @ Id, Vgs45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IPB65R Series

PartOperating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdTechnologyGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)Package / CaseFET TypePower Dissipation (Max)Current - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Mounting TypeGate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max) [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs [Max]
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R095C7ATMA1
150 °C
-55 °C
10 V
95 mOhm
4 V
MOSFET (Metal Oxide)
45 nC
2140 pF
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
128 W
24 A
650 V
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R420CFDATMA1
150 °C
-55 °C
10 V
420 mOhm
4.5 V
MOSFET (Metal Oxide)
870 pF
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
83.3 W
8.7 A
650 V
Surface Mount
32 nC
PG-TO263-3
INFINEON
IPB65R125C7ATMA1
150 °C
-55 °C
10 V
125 mOhm
4 V
MOSFET (Metal Oxide)
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
18 A
650 V
Surface Mount
35 nC
101 W
1670 pF
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R660CFDATMA1
150 °C
-55 °C
10 V
660 mOhm
4.5 V
MOSFET (Metal Oxide)
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
6 A
650 V
Surface Mount
22 nC
62.5 W
615 pF
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R190C7ATMA1
150 °C
-55 °C
10 V
4 V
MOSFET (Metal Oxide)
23 nC
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
72 W
13 A
650 V
Surface Mount
1150 pF
190 mOhm
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R280E6ATMA1
150 °C
-55 °C
10 V
280 mOhm
3.5 V
MOSFET (Metal Oxide)
45 nC
950 pF
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
104 W
13.8 A
650 V
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R225C7ATMA1
150 °C
-55 °C
10 V
225 mOhm
4 V
MOSFET (Metal Oxide)
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
63 W
11 A
650 V
Surface Mount
20 nC
996 pF
PG-T0263-3
INFINEON
IPB65R045C7ATMA1
150 °C
-55 °C
10 V
45 mOhm
4 V
MOSFET (Metal Oxide)
93 nC
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
227 W
46 A
650 V
Surface Mount
4340 pF
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IPB65R600C6ATMA1
150 °C
-55 °C
10 V
600 mOhm
3.5 V
MOSFET (Metal Oxide)
23 nC
440 pF
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
63 W
7.3 A
650 V
Surface Mount
PG-T0263-3
INFINEON
IPB65R090CFD7ATMA1
150 °C
-55 °C
10 V
90 mOhm
4.5 V
MOSFET (Metal Oxide)
53 nC
2513 pF
20 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
N-Channel
25 A
650 V
Surface Mount
127 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPB65R Series

N-Channel 650 V 46A (Tc) 227W (Tc) Surface Mount PG-TO263-3

Documents

Technical documentation and resources

Datasheet

Datasheet