TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IPB65R190C7ATMA1

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INFINEON

MOSFET N-CH 650V 13A D2PAK

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Discrete Semiconductor Products

IPB65R190C7ATMA1

Unknown

INFINEON

MOSFET N-CH 650V 13A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R190C7ATMA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	72 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB65R Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPB65R095C7ATMA1	150 °C	-55 °C	10 V	95 mOhm	4 V	MOSFET (Metal Oxide)	45 nC	2140 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	128 W	24 A	650 V	Surface Mount
INFINEON IPB65R420CFDATMA1	150 °C	-55 °C	10 V	420 mOhm	4.5 V	MOSFET (Metal Oxide)		870 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	83.3 W	8.7 A	650 V	Surface Mount	32 nC
INFINEON IPB65R125C7ATMA1	150 °C	-55 °C	10 V	125 mOhm	4 V	MOSFET (Metal Oxide)			20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel		18 A	650 V	Surface Mount	35 nC	101 W	1670 pF
INFINEON IPB65R660CFDATMA1	150 °C	-55 °C	10 V	660 mOhm	4.5 V	MOSFET (Metal Oxide)			20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel		6 A	650 V	Surface Mount	22 nC	62.5 W	615 pF
INFINEON IPB65R190C7ATMA1	150 °C	-55 °C	10 V		4 V	MOSFET (Metal Oxide)	23 nC		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	72 W	13 A	650 V	Surface Mount			1150 pF	190 mOhm
INFINEON IPB65R280E6ATMA1	150 °C	-55 °C	10 V	280 mOhm	3.5 V	MOSFET (Metal Oxide)	45 nC	950 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	104 W	13.8 A	650 V	Surface Mount
INFINEON IPB65R225C7ATMA1	150 °C	-55 °C	10 V	225 mOhm	4 V	MOSFET (Metal Oxide)			20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	63 W	11 A	650 V	Surface Mount	20 nC		996 pF
INFINEON IPB65R045C7ATMA1	150 °C	-55 °C	10 V	45 mOhm	4 V	MOSFET (Metal Oxide)	93 nC		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	227 W	46 A	650 V	Surface Mount			4340 pF
INFINEON IPB65R600C6ATMA1	150 °C	-55 °C	10 V	600 mOhm	3.5 V	MOSFET (Metal Oxide)	23 nC	440 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	63 W	7.3 A	650 V	Surface Mount
INFINEON IPB65R090CFD7ATMA1	150 °C	-55 °C	10 V	90 mOhm	4.5 V	MOSFET (Metal Oxide)	53 nC	2513 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel		25 A	650 V	Surface Mount		127 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPB65R Series

N-Channel 650 V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3

Documents

Technical documentation and resources