Discrete Semiconductor Products

FDP10AN06A0

Obsolete

ON Semiconductor

MOSFET N-CH 60V 12A/75A TO220-3

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Discrete Semiconductor Products

FDP10AN06A0

Obsolete

ON Semiconductor

MOSFET N-CH 60V 12A/75A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP10AN06A0

Current - Continuous Drain (Id) @ 25°C	12 A, 75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	135 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP10N60NZ Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup> II, 600V, 10A, 750mΩ, TO-220

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology
ON Semiconductor FDP10N60NZ
ON Semiconductor FDP10N60NZ	TO-220-3	5 V	750 mOhm	30 nC	10 A	1475 pF	25 V	185 W	-55 °C	150 °C	10 V	N-Channel	Through Hole	600 V	TO-220-3	MOSFET (Metal Oxide)
ON Semiconductor FDP10AN06A0	TO-220-3	4 V	10.5 mOhm		12 A 75 A	1840 pF	20 V	135 W	-55 °C	175 ░C	6 V 10 V	N-Channel	Through Hole	60 V	TO-220-3	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDP10N60NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources