Part	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology
ON Semiconductor FDP10N60NZ
ON Semiconductor FDP10N60NZ	TO-220-3	5 V	750 mOhm	30 nC	10 A	1475 pF	25 V	185 W	-55 °C	150 °C	10 V	N-Channel	Through Hole	600 V	TO-220-3	MOSFET (Metal Oxide)
ON Semiconductor FDP10AN06A0	TO-220-3	4 V	10.5 mOhm		12 A 75 A	1840 pF	20 V	135 W	-55 °C	175 ░C	6 V 10 V	N-Channel	Through Hole	60 V	TO-220-3	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	229	$ 1.31
		229	$ 1.31
Newark	Each	1	$ 2.34
		10	$ 1.68
		25	$ 1.66

Description

General part information

FDP10N60NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing

Technical Data Sheet EN

Datasheet