Specification	JAN2N6032

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	25 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	140 W
Qualification	MIL-PRF-19500/528
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

JAN2N6032-Transistor Series

NPN Silicon Power 90V to 120V, 40A to 50A

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Grade	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Current - Collector (Ic) (Max)	Power - Max [Max]	Package / Case
Microchip Technology JAN2N6032	90 V	200 °C	-65 °C	NPN	Military	Through Hole	25 mA	10	MIL-PRF-19500/528	50 A	140 W	TO-204AA TO-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 392.08
Microchip Direct	N/A	1	$ 422.24
Newark	Each	100	$ 392.08
		500	$ 377.00

Description

General part information

JAN2N6032-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N6032 and 2N6033 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/528.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

2N6032 and 2N6033

Data Sheets