IPB60R099C6ATMA1
NRNDMOSFET TRANSISTOR, N CHANNEL, 37.9 A, 650 V, 0.09 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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IPB60R099C6ATMA1
NRNDMOSFET TRANSISTOR, N CHANNEL, 37.9 A, 650 V, 0.09 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R099C6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 37.9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 119 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2660 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) [Max] | 278 W |
| Rds On (Max) @ Id, Vgs | 99 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB60R099 Series
CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Documents
Technical documentation and resources
