IPB60R099 Series

Manufacturer: INFINEON

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 99 MOHM;

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Qualification	Grade	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPB60R099P7ATMA1	N-Channel	1952 pF	117 W	45 nC	600 V	MOSFET (Metal Oxide)	4 V	Surface Mount	99 mOhm	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	31 A	150 °C	-55 °C
INFINEON IPB60R099C6ATMA1	N-Channel				600 V	MOSFET (Metal Oxide)	3.5 V	Surface Mount	99 mOhm	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	37.9 A	150 °C	-55 °C	278 W	119 nC	2660 pF
INFINEON IPB60R099C7ATMA1	N-Channel		110 W		600 V	MOSFET (Metal Oxide)	4 V	Surface Mount	99 mOhm	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	22 A	150 °C	-55 °C		42 nC	1819 pF	PG-TO263-3-2
INFINEON IPB60R099CPAATMA1	N-Channel		255 W		600 V	MOSFET (Metal Oxide)	3.5 V	Surface Mount	105 mOhm	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	31 A	150 °C	-40 °C		80 nC	2800 pF	PG-TO263-3-2	AEC-Q101	Automotive
INFINEON IPB60R099CPATMA1	N-Channel		255 W		600 V	MOSFET (Metal Oxide)	3.5 V	Surface Mount		20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	31 A	150 °C	-55 °C		80 nC	2800 pF	PG-TO263-3-2			99 mOhm