TC7920K6-G
ActiveTWO PAIR, N- AND P-CHANNEL ENHANCEMENT-MODE MOSFET W/DRAIN-DIODES 12 VDFN 4X4X1.0MM T/R ROHS COMPLIANT: YES
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TC7920K6-G
ActiveTWO PAIR, N- AND P-CHANNEL ENHANCEMENT-MODE MOSFET W/DRAIN-DIODES 12 VDFN 4X4X1.0MM T/R ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | TC7920K6-G |
|---|---|
| Configuration | 2 Wide |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 52 pF, 54 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 12-VFDFN Exposed Pad |
| Supplier Device Package | 12-DFN (4x4) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.46 | |
| 25 | $ 2.06 | |||
| 100 | $ 1.88 | |||
| Digi-Reel® | 1 | $ 2.46 | ||
| 25 | $ 2.06 | |||
| 100 | $ 1.88 | |||
| Tape & Reel (TR) | 3300 | $ 1.88 | ||
| Microchip Direct | T/R | 1 | $ 2.46 | |
| 25 | $ 2.06 | |||
| 100 | $ 1.88 | |||
| 1000 | $ 1.81 | |||
| 5000 | $ 1.80 | |||
| Newark | Each (Supplied on Full Reel) | 3300 | $ 1.94 | |
Description
General part information
TC7920 Series
TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complementary, high-speed, high voltage, gate-clamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources