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Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN120ENEX

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 3.1A 6TSOP

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DocumentsDatasheet
Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN120ENEX

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 3.1A 6TSOP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN120ENEX
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC
Input Capacitance (Ciss) (Max) @ Vds275 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-74, SOT-457
Power Dissipation (Max)6.25 W, 1.4 W
Rds On (Max) @ Id, Vgs123 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

PMN120ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources