
Discrete Semiconductor Products
PMN120ENEX
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 60V 3.1A 6TSOP
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Discrete Semiconductor Products
PMN120ENEX
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 60V 3.1A 6TSOP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PMN120ENEX |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-74, SOT-457 |
| Power Dissipation (Max) | 6.25 W, 1.4 W |
| Rds On (Max) @ Id, Vgs | 123 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PMN120ENEA Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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Technical documentation and resources