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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | FET Type | Power Dissipation (Max) | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Current - Continuous Drain (Id) @ 25°C | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 275 pF | 123 mOhm | 2.7 V | -55 °C | 150 °C | 7.4 nC | SC-74 SOT-457 | 20 V | N-Channel | 1.4 W 6.25 W | Surface Mount | MOSFET (Metal Oxide) | 4.5 V 10 V | 6-TSOP | 60 V | |||
 Freescale Semiconductor - NXP | 196 pF | 123 mOhm | 2.7 V | -55 °C | 175 ░C | 6 nC | SC-74 SOT-457 | 20 V | N-Channel | 7.5 W 670 mW | Surface Mount | MOSFET (Metal Oxide) | 4.5 V 10 V | 6-TSOP | 60 V | Automotive | 2.5 A | AEC-Q101 |