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10-DFN, L10.3X3 PKG
Integrated Circuits (ICs)

ISL80113IRAJZ-T

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Renesas Electronics Corporation

ULTRA LOW DROPOUT 3A LOW INPUT VOLTAGE NMOS LDOS

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10-DFN, L10.3X3 PKG
Integrated Circuits (ICs)

ISL80113IRAJZ-T

Active
Renesas Electronics Corporation

ULTRA LOW DROPOUT 3A LOW INPUT VOLTAGE NMOS LDOS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationISL80113IRAJZ-T
Control FeaturesEnable, Power Good
Current - Output3 A
Current - Quiescent (Iq)10 mA
Mounting TypeSurface Mount
Number of Regulators1
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Output ConfigurationPositive
Output TypeAdjustable
Package / Case10-VFDFN Exposed Pad
Protection FeaturesOver Current, Over Temperature
PSRR [Max]80 dB
PSRR [Min]60 dB
Supplier Device Package10-DFN (3x3)
Voltage - Input (Max) [Max]3.6 V
Voltage - Output (Max) [Max]3.3 V
Voltage - Output (Min/Fixed)0.8 V
Voltage Dropout (Max) [Max]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 6000$ 1.62

Description

General part information

ISL80113 Series

The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output current and are optimized for low voltage conversions. Operating with a VINof 1V to 3. 6V and with a legacy 2. 9V to 5. 5V on the BIAS, the VOUTis adjustable from 0. 8V to 3. 3V. With a VINPSRR greater than 40dB at 100kHz makes these LDOs an ideal choice in noise sensitive applications. The guaranteed ±1. 6% VOUTaccuracy overall conditions lend these parts to supplying an accurate voltage to the latest low voltage digital ICs. An enable input allows the part to be placed into a low quiescent current shutdown mode. A submicron CMOS process is utilized for this product family to deliver best-in-class analog performance and overall value for applications in need of input voltage conversions typically below 2. 5V. It also has the superior load transient regulation unique to a NMOS power stage. These LDOs consume significantly lower quiescent current as a function of load compared to bipolar LDOs.

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Technical documentation and resources