
ISL80113IRAJZ
ActiveULTRA LOW DROPOUT 3A LOW INPUT VOLTAGE NMOS LDOS
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ISL80113IRAJZ
ActiveULTRA LOW DROPOUT 3A LOW INPUT VOLTAGE NMOS LDOS
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISL80113IRAJZ |
|---|---|
| Control Features | Enable, Power Good |
| Current - Output | 3 A |
| Current - Quiescent (Iq) | 10 mA |
| Mounting Type | Surface Mount |
| Number of Regulators | 1 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | Positive |
| Output Type | Adjustable |
| Package / Case | 10-VFDFN Exposed Pad |
| Protection Features | Over Current, Over Temperature |
| PSRR [Max] | 80 dB |
| PSRR [Min] | 60 dB |
| Supplier Device Package | 10-DFN (3x3) |
| Voltage - Input (Max) [Max] | 3.6 V |
| Voltage - Output (Max) [Max] | 3.3 V |
| Voltage - Output (Min/Fixed) | 0.8 V |
| Voltage Dropout (Max) [Max] | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.35 | |
| 10 | $ 2.11 | |||
| 25 | $ 2.00 | |||
| 100 | $ 1.73 | |||
| 250 | $ 1.64 | |||
| 500 | $ 1.56 | |||
Description
General part information
ISL80113 Series
The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output current and are optimized for low voltage conversions. Operating with a VINof 1V to 3. 6V and with a legacy 2. 9V to 5. 5V on the BIAS, the VOUTis adjustable from 0. 8V to 3. 3V. With a VINPSRR greater than 40dB at 100kHz makes these LDOs an ideal choice in noise sensitive applications. The guaranteed ±1. 6% VOUTaccuracy overall conditions lend these parts to supplying an accurate voltage to the latest low voltage digital ICs. An enable input allows the part to be placed into a low quiescent current shutdown mode. A submicron CMOS process is utilized for this product family to deliver best-in-class analog performance and overall value for applications in need of input voltage conversions typically below 2. 5V. It also has the superior load transient regulation unique to a NMOS power stage. These LDOs consume significantly lower quiescent current as a function of load compared to bipolar LDOs.
Documents
Technical documentation and resources