Discrete Semiconductor Products

STP6N80K5

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STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Discrete Semiconductor Products

STP6N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP6N80K5

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	255 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V
Vgs(th) (Max) @ Id	5 V

STP6N80K5 Series

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id
STMicroelectronics STP6N80K5	800 V	N-Channel	1.6 Ohm	MOSFET (Metal Oxide)	TO-220-3	85 W	4.5 A	7.5 nC	TO-220	Through Hole	30 V	255 pF	10 V	150 °C	-55 °C	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.84
Newark	Each	1	$ 1.43

Description

General part information

STP6N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.