STGWA40H65DFB2
ActiveTRENCH GATE FIELD-STOP, 650 V, 40 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
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STGWA40H65DFB2
ActiveTRENCH GATE FIELD-STOP, 650 V, 40 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA40H65DFB2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 72 A |
| Gate Charge | 153 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 230 W |
| Reverse Recovery Time (trr) | 75 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 765 µJ, 410 µJ |
| Td (on/off) @ 25°C [custom] | 18 ns |
| Td (on/off) @ 25°C [custom] | 72 ns |
| Test Condition | 400 V, 40 A, 4.7 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 630 | $ 3.89 | |
Description
General part information
STGWA40H65DFB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources