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8-PowerTDFN, Power56
Discrete Semiconductor Products

FDMS3668S

Obsolete
ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> POWER STAGE MOSFET 30V

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DocumentsDatasheet
8-PowerTDFN, Power56
Discrete Semiconductor Products

FDMS3668S

Obsolete
ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> POWER STAGE MOSFET 30V

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS3668S
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C18 A, 13 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1765 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackagePower56
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 330$ 0.91
330$ 0.91

Description

General part information

FDMS3668S Series

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Documents

Technical documentation and resources