
FDMS3668S
ObsoleteASYMMETRIC DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> POWER STAGE MOSFET 30V
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FDMS3668S
ObsoleteASYMMETRIC DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> POWER STAGE MOSFET 30V
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS3668S |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 18 A, 13 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1765 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | Power56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 330 | $ 0.91 | |
| 330 | $ 0.91 | |||
Description
General part information
FDMS3668S Series
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Documents
Technical documentation and resources