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Discrete Semiconductor Products

VS-8ETH06-1HM3

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Discrete Semiconductor Products

VS-8ETH06-1HM3

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-8ETH06-1HM3
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr50 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
QualificationAEC-Q101
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-262
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 0.60

Description

General part information

8ETH06 Series

Diode 600 V 8A Through Hole TO-262

Documents

Technical documentation and resources

No documents available