8ETH06 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE GEN PURP 600V 8A TO263AB

Part	Reverse Recovery Time (trr)	Mounting Type	Grade	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Qualification	Current - Reverse Leakage @ Vr	Technology	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-8ETH06STRLPBF	25 ns	Surface Mount	Automotive	8 A	600 V	175 ░C	-65 C	TO-263AB (D2PAK)	AEC-Q101	50 µA	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06-1HM3	25 ns	Through Hole	Automotive	8 A	600 V	175 ░C	-55 C	TO-262	AEC-Q101	50 µA	Standard	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06FP-N3	25 ns	Through Hole		8 A	600 V	175 ░C	-65 C	TO-220-2 Full Pack		50 µA	Standard	TO-220-2 Full Pack	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06HN3	25 ns	Through Hole	Automotive	8 A	600 V	175 ░C	-65 C	TO-220AC	AEC-Q101	50 µA	Standard	TO-220-2	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06S-M3	25 ns	Surface Mount		8 A	600 V	175 ░C	-65 C	TO-263AB (D2PAK)		50 µA	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06STRR-M3	25 ns	Surface Mount		8 A	600 V	175 ░C	-65 C	TO-263AB (D2PAK)		50 µA	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division VS-8ETH06-N3	25 ns	Through Hole		8 A	600 V	175 ░C	-65 C	TO-220AC		50 µA	Standard	TO-220-2	200 mA 500 ns	2.4 V
Vishay General Semiconductor - Diodes Division 8ETH06S	25 ns	Surface Mount		8 A	600 V	175 ░C	-65 C	TO-263AB (D2PAK)		50 µA	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	2.4 V