FDC6303N
ActiveTRANSISTOR MOSFET ARRAY DUAL N-CH 25V 0.68A 6-PIN TSOT-23 T/R
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FDC6303N
ActiveTRANSISTOR MOSFET ARRAY DUAL N-CH 25V 0.68A 6-PIN TSOT-23 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC6303N |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 680 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | SuperSOT™-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.46 | |
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| Digi-Reel® | 1 | $ 0.46 | ||
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
| 6000 | $ 0.15 | |||
| 9000 | $ 0.14 | |||
| 30000 | $ 0.13 | |||
| 75000 | $ 0.13 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.16 | |
| 6000 | $ 0.16 | |||
| 12000 | $ 0.15 | |||
| 18000 | $ 0.15 | |||
| 30000 | $ 0.14 | |||
| ON Semiconductor | N/A | 1 | $ 0.14 | |
Description
General part information
FDC6303N Series
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Documents
Technical documentation and resources