Discrete Semiconductor Products

AOB2500L

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MOSFET N-CH 150V 11.5/152A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 150V 11.5/152A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB2500L

Current - Continuous Drain (Id) @ 25°C	152 A, 11.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	136 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	2.1 W, 375 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOB2500L	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.1 W 375 W	11.5 A 152 A	MOSFET (Metal Oxide)	150 V	6.2 mOhm	3.5 V	6 V 10 V	20 V	N-Channel	175 °C	-55 °C	Surface Mount	6460 pF	136 nC	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 11.5A (Ta), 152A (Tc) 2.1W (Ta), 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources