FDMD8260LET60

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ON Semiconductor

DUAL N-CHANNEL POWER TRENCH® MOSFET 60V, 5.8MΩ

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DocumentsPackage Drawing-483BN-PQFN12 3.3x5, 0.65P Datasheet

Discrete Semiconductor Products

FDMD8260LET60

Active

ON Semiconductor

DUAL N-CHANNEL POWER TRENCH® MOSFET 60V, 5.8MΩ

Deep-Dive with AI

DocumentsPackage Drawing-483BN-PQFN12 3.3x5, 0.65P Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMD8260LET60

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds	5245 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	12-Power3.3x5
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMD8260LET60 Series

Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type
ON Semiconductor FDMD8260L	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	150 °C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1 W	Surface Mount
ON Semiconductor FDMD8260L	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	150 °C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1 W	Surface Mount
ON Semiconductor FDMD8260LET60	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	175 ░C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1.1 W	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	89	$ 3.38
		94	$ 3.19

Description

General part information

FDMD8260LET60 Series

This device includes two 60V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.