FDMD8260LET60 Series

Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

Catalog

Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type
ON Semiconductor FDMD8260L	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	150 °C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1 W	Surface Mount
ON Semiconductor FDMD8260L	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	150 °C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1 W	Surface Mount
ON Semiconductor FDMD8260LET60	15 A	12-Power3.3x5	3 V	5.8 mOhm	-55 °C	175 ░C	5245 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	68 nC	60 V	1.1 W	Surface Mount

Catalog

Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

Key Features

• Extended TJRating to 175 °C

• Max rDS(on)= 4.9 mΩ at VGS= 10 V, ID= 15 A

• Max rDS(on)= 7.7 mΩ at VGS= 4.5 V, ID= 12 A

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin-out Capability

• Termination is Lead-free and RoHS Compliant

Description

This device includes two 60V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.