Discrete Semiconductor Products

STW50N65DM6

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STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

Discrete Semiconductor Products

STW50N65DM6

Active

STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW50N65DM6

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	52500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	91 mOhm
Supplier Device Package	TO-247 Long Leads
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STW50 Series

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	FET Type	Technology	Mounting Type	Supplier Device Package	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Qualification	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW50N65DM2AG	28 A	70 nC	300 W	TO-247-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-247-3	25 V	150 °C	-55 °C	5 V	AEC-Q101	87 mOhm	3200 pF	10 V	650 V	Automotive
STMicroelectronics STW50N65DM6	33 A	52.5 nC	250 W	TO-247-3	N-Channel	MOSFET (Metal Oxide)	Through Hole	TO-247 Long Leads	25 V	150 °C	-55 °C	4.75 V		91 mOhm		10 V	650 V		52500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 9.11
	Tube	30	$ 6.58
		90	$ 5.88
		300	$ 5.54
		750	$ 5.19
		1500	$ 4.67
Newark	Each	1	$ 7.29

Description

General part information

STW50 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet