Discrete Semiconductor Products

SI5915DC-T1-E3

Obsolete

MOSFET 2P-CH 8V 3.4A 1206-8

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 8V 3.4A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5915DC-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	450 mV

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Mounting Type	Supplier Device Package	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI5915DC-T1-GE3	9 nC	450 mV	1.1 W	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	2 P-Channel	-55 °C	150 °C	3.4 A	Logic Level Gate	8 V	70 mOhm
Vishay General Semiconductor - Diodes Division SI5915DC-T1-E3	9 nC	450 mV	1.1 W	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	2 P-Channel	-55 °C	150 °C	3.4 A	Logic Level Gate	8 V	70 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 8V 3.4A 1.1W Surface Mount 1206-8 ChipFET™

Technical documentation and resources

No documents available