SI5915 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2P-CH 8V 3.4A 1206-8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Power - Max [Max] | Technology | Mounting Type | Supplier Device Package | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 9 nC | 450 mV | 1.1 W | MOSFET (Metal Oxide) | Surface Mount | 1206-8 ChipFET™ | 2 P-Channel | -55 °C | 150 °C | 3.4 A | Logic Level Gate | 8 V | 70 mOhm |
Vishay General Semiconductor - Diodes Division | 9 nC | 450 mV | 1.1 W | MOSFET (Metal Oxide) | Surface Mount | 1206-8 ChipFET™ | 2 P-Channel | -55 °C | 150 °C | 3.4 A | Logic Level Gate | 8 V | 70 mOhm |