FDG1024NZ
ActiveDUAL MOSFET, DUAL N CHANNEL, 1.2 A, 20 V, 0.16 OHM, 4.5 V, 800 MV ROHS COMPLIANT: YES
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FDG1024NZ
ActiveDUAL MOSFET, DUAL N CHANNEL, 1.2 A, 20 V, 0.16 OHM, 4.5 V, 800 MV ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDG1024NZ |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 1.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 300 mW |
| Rds On (Max) @ Id, Vgs | 175 mOhm |
| Supplier Device Package | SC-88 (SC-70-6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.00 | |
| 10 | $ 0.62 | |||
| 100 | $ 0.41 | |||
| 500 | $ 0.31 | |||
| 1000 | $ 0.28 | |||
| Digi-Reel® | 1 | $ 1.00 | ||
| 10 | $ 0.62 | |||
| 100 | $ 0.41 | |||
| 500 | $ 0.31 | |||
| 1000 | $ 0.28 | |||
| Tape & Reel (TR) | 3000 | $ 0.25 | ||
| 6000 | $ 0.23 | |||
| 9000 | $ 0.22 | |||
| 15000 | $ 0.21 | |||
| Newark | Each | 1 | $ 1.02 | |
| 1 | $ 1.02 | |||
| 10 | $ 0.64 | |||
| 10 | $ 0.64 | |||
| 100 | $ 0.41 | |||
| 100 | $ 0.41 | |||
| 500 | $ 0.32 | |||
| 500 | $ 0.32 | |||
| 1000 | $ 0.29 | |||
| 1000 | $ 0.29 | |||
| 2500 | $ 0.25 | |||
| 2500 | $ 0.25 | |||
| 12000 | $ 0.21 | |||
| 12000 | $ 0.21 | |||
| ON Semiconductor | N/A | 1 | $ 0.22 | |
Description
General part information
FDG1024NZ Series
This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Documents
Technical documentation and resources