FDG1024NZ Series

Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ

Part	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor FDG1024NZ	Surface Mount	1 V	175 mOhm	MOSFET (Metal Oxide)	1.2 A	-55 °C	150 °C	Logic Level Gate	300 mW	2 N-Channel (Dual)	150 pF	2.6 nC	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	20 V

Catalog

Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ

Key Features

• Max rDS(on)= 175 mO at VGS= 4.5 V, ID= 1.2 A

• Max rDS(on)= 215 mO at VGS= 2.5 V, ID= 1.0 A

• Max rDS(on)= 270 mO at VGS= 1.8 V, ID= 0.9 A

• Max rDS(on)= 389 mO at VGS= 1.5 V, ID= 0.8 A

• HBM ESD protection level >2 kV (Note 3)

• Very low level gate drive requirements allowing operation in 1.5 V circuits (VGS(th)< 1 V)

• Very small package outline SC70-6

• RoHS Compliant

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.