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TO-263
Discrete Semiconductor Products

FDB0630N1507L

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 130A, 6.4MΩ

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TO-263
Discrete Semiconductor Products

FDB0630N1507L

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 130A, 6.4MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB0630N1507L
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]135 nC
Input Capacitance (Ciss) (Max) @ Vds9895 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max)300 W, 3.8 W
Rds On (Max) @ Id, Vgs6.4 mOhm
Supplier Device PackageTO-263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.74
10$ 5.26
100$ 3.86
Digi-Reel® 1$ 7.74
10$ 5.26
100$ 3.86
Tape & Reel (TR) 800$ 3.39
NewarkEach 500$ 3.61
ON SemiconductorN/A 1$ 3.12

Description

General part information

FDB0630N1507L Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.