
Discrete Semiconductor Products
FDB0630N1507L
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 130A, 6.4MΩ
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Discrete Semiconductor Products
FDB0630N1507L
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 130A, 6.4MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB0630N1507L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 130 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 135 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9895 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) @ Id, Vgs | 6.4 mOhm |
| Supplier Device Package | TO-263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.74 | |
| 10 | $ 5.26 | |||
| 100 | $ 3.86 | |||
| Digi-Reel® | 1 | $ 7.74 | ||
| 10 | $ 5.26 | |||
| 100 | $ 3.86 | |||
| Tape & Reel (TR) | 800 | $ 3.39 | ||
| Newark | Each | 500 | $ 3.61 | |
| ON Semiconductor | N/A | 1 | $ 3.12 | |
Description
General part information
FDB0630N1507L Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Documents
Technical documentation and resources