Discrete Semiconductor Products

IRFP32N50KPBF

LTB

MOSFET N-CH 500V 32A TO247-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 32A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP32N50KPBF

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	5280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	460 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFP32N50KPBF	-55 °C	150 °C	5 V	460 W	5280 pF	30 V	190 nC	32 A	500 V	Through Hole	N-Channel	MOSFET (Metal Oxide)	10 V	160 mOhm	TO-247-3	TO-247AC
Vishay General Semiconductor - Diodes Division IRFP32N50K	-55 °C	150 °C	5 V	460 W	5280 pF	30 V	190 nC	32 A	500 V	Through Hole	N-Channel	MOSFET (Metal Oxide)	10 V	160 mOhm	TO-247-3	TO-247AC

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General part information

N-Channel 500 V 32A (Tc) 460W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available