IRFP32 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 32A TO247-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 5 V | 460 W | 5280 pF | 30 V | 190 nC | 32 A | 500 V | Through Hole | N-Channel | MOSFET (Metal Oxide) | 10 V | 160 mOhm | TO-247-3 | TO-247AC |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 5 V | 460 W | 5280 pF | 30 V | 190 nC | 32 A | 500 V | Through Hole | N-Channel | MOSFET (Metal Oxide) | 10 V | 160 mOhm | TO-247-3 | TO-247AC |