Discrete Semiconductor Products

SSM6L40TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L40TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.6 A, 1.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs	2.9 nC, 5.1 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF, 120 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	226 mOhm
Rds On (Max) @ Id, Vgs [Min]	122 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V, 2 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)

Part	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Technology	Vgs(th) (Max) @ Id	FET Feature	Package / Case
Toshiba Semiconductor and Storage SSM6L40TU,LF	500 mW	N and P-Channel	226 mOhm	122 mOhm	30 V	UF6	120 pF 180 pF	Surface Mount	1.4 A 1.6 A	2.9 nC 5.1 nC	150 °C	MOSFET (Metal Oxide)	2 V 2.6 V	Logic Level Gate 4V Drive	6-SMD Flat Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)

Technical documentation and resources