High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)
| Part | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs [Max] | Rds On (Max) @ Id, Vgs [Min] | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Technology | Vgs(th) (Max) @ Id | FET Feature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 500 mW | N and P-Channel | 226 mOhm | 122 mOhm | 30 V | UF6 | 120 pF 180 pF | Surface Mount | 1.4 A 1.6 A | 2.9 nC 5.1 nC | 150 °C | MOSFET (Metal Oxide) | 2 V 2.6 V | Logic Level Gate 4V Drive | 6-SMD Flat Leads |