Specification	NVMYS029N08LHTWG

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	431 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.5 W, 33 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVMYS029N08LH Series

MOSFET - Power, Single N-Channel, 80 V, 29 mΩ, 22 A

Part	Qualification	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Technology	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NVMYS029N08LHTWG	AEC-Q101	Surface Mount	20 V	4.5 V 10 V	5	LFPAK4	6	431 pF	3.5 W 33 W	80 V	9 nC	Automotive	MOSFET (Metal Oxide)	2 V	N-Channel	-55 °C	175 ░C	SOT-1023 4-LFPAK	29 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.87
		10	$ 0.71
		100	$ 0.55
		500	$ 0.47
		1000	$ 0.38
	Digi-Reel®	1	$ 0.87
		10	$ 0.71
		100	$ 0.55
		500	$ 0.47
		1000	$ 0.38
	Tape & Reel (TR)	3000	$ 0.36
		6000	$ 0.34
		9000	$ 0.33
		30000	$ 0.32
Newark	Each (Supplied on Cut Tape)	1	$ 1.29
		10	$ 0.89
		25	$ 0.79
		50	$ 0.69
		100	$ 0.59
		250	$ 0.53
		500	$ 0.47
ON Semiconductor	N/A	1	$ 0.35

Description

General part information

NVMYS029N08LH Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.