NVMYS029N08LH Series

MOSFET - Power, Single N-Channel, 80 V, 29 mΩ, 22 A

Catalog

MOSFET - Power, Single N-Channel, 80 V, 29 mΩ, 22 A

Part	Qualification	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Technology	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NVMYS029N08LHTWG	AEC-Q101	Surface Mount	20 V	4.5 V 10 V	5	LFPAK4	6	431 pF	3.5 W 33 W	80 V	9 nC	Automotive	MOSFET (Metal Oxide)	2 V	N-Channel	-55 °C	175 ░C	SOT-1023 4-LFPAK	29 mOhm

Catalog

MOSFET - Power, Single N-Channel, 80 V, 29 mΩ, 22 A

Key Features

• Small Footprint (5x6mm)

• Low RDS(on)

• Low QGand Capacitance

• Gull-wings leads for an improved BLR performance

• These Devices are Pb−Free and are RoHS Compliant

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.