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8 POWER WDFN
Discrete Semiconductor Products

FDMC86116LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 7.5 A, 0.079 OHM, POWER 33, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-511DR-WDFN8 3.3x3.3, 0.65P+2
8 POWER WDFN
Discrete Semiconductor Products

FDMC86116LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 7.5 A, 0.079 OHM, POWER 33, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-511DR-WDFN8 3.3x3.3, 0.65P+2

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86116LZ
Current - Continuous Drain (Id) @ 25°C7.5 A, 3.3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds310 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)19 W, 2.3 W
Rds On (Max) @ Id, Vgs [Max]103 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.54
10$ 0.98
100$ 0.65
500$ 0.51
1000$ 0.47
Digi-Reel® 1$ 1.54
10$ 0.98
100$ 0.65
500$ 0.51
1000$ 0.47
Tape & Reel (TR) 3000$ 0.41
6000$ 0.38
9000$ 0.38
NewarkEach (Supplied on Cut Tape) 1$ 1.48
10$ 0.95
25$ 0.84
50$ 0.74
100$ 0.63
250$ 0.57
ON SemiconductorN/A 1$ 0.35

Description

General part information

FDMC86116LZ Series

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S Zener has been added to enhance ESD voltage level.