Discrete Semiconductor Products

TP0610K-T1

Obsolete

MOSFET P-CH 60V 185MA SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 185MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	TP0610K-T1

Current - Continuous Drain (Id) @ 25°C	185 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	23 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division TP0610K-T1	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	1.7 nC	20 V	4.5 V 10 V	23 pF	-55 °C	150 °C	350 mW	60 V	3 V	P-Channel	Surface Mount	SOT-23-3 (TO-236)	185 mA	6 Ohm
Vishay General Semiconductor - Diodes Division TP0610K-T1-E3	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	1.7 nC	20 V	4.5 V 10 V	23 pF	-55 °C	150 °C	350 mW	60 V	3 V	P-Channel	Surface Mount	SOT-23-3 (TO-236)	185 mA	6 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources