TP0610 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 60V 185MA SOT23-3
| Part | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 1.7 nC | 20 V | 4.5 V 10 V | 23 pF | -55 °C | 150 °C | 350 mW | 60 V | 3 V | P-Channel | Surface Mount | SOT-23-3 (TO-236) | 185 mA | 6 Ohm |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 1.7 nC | 20 V | 4.5 V 10 V | 23 pF | -55 °C | 150 °C | 350 mW | 60 V | 3 V | P-Channel | Surface Mount | SOT-23-3 (TO-236) | 185 mA | 6 Ohm |